Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices
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Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices
AbstructThe electrical characteristics of modern VLSI and ULSI device structures may be significantly altered by self-heating effects. The device modeling of such structures demands the simultaneous simulation of both the electrical and the thermal device behavior and their mutual interaction. Although, at present, a large number of multi-dimensional device simulators are available, most of the...
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ژورنال
عنوان ژورنال: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
سال: 1994
ISSN: 0278-0070
DOI: 10.1109/43.265671